Optical investigations of GaAs‐GaInP quantum wells grown on the GaAs, InP, and Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108429
Reference7 articles.
1. First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
2. High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition
3. Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
4. Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
5. Optical investigations of GaAs‐GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
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1. Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement;Japanese Journal of Applied Physics;2011-01-20
2. Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement;Japanese Journal of Applied Physics;2011-01-01
3. Study of narrow InGaP/(In)GaAs quantum wells;Journal of Crystal Growth;2002-07
4. Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy;Physica B: Condensed Matter;2001-12
5. Preferential group-V replacement at InGaP/GaAs interfaces grown by gas-source MBE;Journal of Crystal Growth;2000-02
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