Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2719650
Reference12 articles.
1. Basal plane dislocation-free epitaxy of silicon carbide
2. Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition
3. Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy
4. Stacking-fault formation and propagation in 4H-SiC PiN diodes
5. Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
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2. Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC;Journal of Applied Physics;2021-08-21
3. Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC;Applied Physics Express;2021-03-10
4. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26
5. Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy;Applied Physics Letters;2020-04-27
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