Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC
Author:
Affiliation:
1. Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0047666
Reference39 articles.
1. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
2. Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes
3. Degradation of hexagonal silicon-carbide-based bipolar devices
4. Core structure and properties of partial dislocations in silicon carbide p-i-n diodes
5. Theory of recombination-enhanced defect reactions in semiconductors
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1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01
2. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
3. Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2023-03-29
4. Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC;Japanese Journal of Applied Physics;2022-11-24
5. Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2022-10-31
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