Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)-Reference-Cited by-同舟云学术

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Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)

Published:2020-06-22 Issue:25 Volume:116 Page:252101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tetzner H.¹^ORCID,Sana P.¹^ORCID,Klesse W. M.¹,Capellini G.¹²^ORCID,Schubert M. A.¹,Thapa S. B.³,Storck P.³,Schroeder T.¹,Zoellner M. H.¹^ORCID

Affiliation:

1. IHP–Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. Dipartimento di Scienze, Università degli studi Roma Tre, Viale Marconi 446, 00146 Roma, Italy

3. Siltronic AG, Hans Seidel Platz 4, 81737 Munich, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005484

Reference35 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

4. Optical Disk Recording Using a GaN Blue-Violet Laser Diode

5. The 2018 GaN power electronics roadmap

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1. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01

2. Enhanced photoelectric performance of GaN-based Micro-LEDs by ion implantation;Optical Materials;2021-11

3. X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks;Thin Solid Films;2021-08

4. Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer;SN Applied Sciences;2021-02-08

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