Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368654
Reference14 articles.
1. Dielectric breakdown in electrically stressed thin films of thermal SiO2
2. Modeling and characterization of gate oxide reliability
3. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
4. Breakdown and defect generation in ultrathin gate oxide
5. Soft breakdown of ultra-thin gate oxide layers
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