Breakdown and defect generation in ultrathin gate oxide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362794
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1. Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide
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1. Theoretical Simulation of Dielectric Breakdown by Molecular Dynamics and Tight-Binding Quantum Chemistry Methods;Japanese Journal of Applied Physics;2007-04-24
2. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors;Microelectronic Engineering;2006-10
3. Effect of nitrogen incorporation to oxidation process on the reliability of magnetic tunnel junctions;IEEE Transactions on Magnetics;2006-01
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5. The oxide gate dielectric: do we know all we should?;Journal of Physics: Condensed Matter;2005-05-13
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