Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices-Reference-Cited by-同舟云学术

Long-Term Stability of Epitaxial (Nd 1– x Gd x 2 O 3 Thin Films Grown on Si(001) for Future CMOS Devices

Published:2016-07 Issue:7 Volume:63 Page:2852-2857
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ghosh Kankat,Das Sudipta,Fissel Andreas,Osten H. Jorg,Laha Apurba

Funder

Science and Engineering Research Board through the Department of Science and Technology and Department of Electronics and Information Technology, Government of India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7494744/07480385.pdf?arnumber=7480385

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