High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2 O3 Gate Dielectric Doped with Nb-Reference-Cited by-同舟云学术

High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2 O3 Gate Dielectric Doped with Nb

Published:2018-01-10 Issue:5 Volume:215 Page:1700609
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ma Yuanxiao¹^ORCID,Tang Wing Man²,Han Chuanyu³,Lai Pui To¹

Affiliation:

1. Department of Electrical and Electronic Engineering The University of Hong Kong; Pokfulam Road Hong Kong Island 999077 Hong Kong

2. Department of Applied Physics The Hong Kong Polytechnic University; 999077 Hung Hom Hong Kong

3. School of Microelectronics Xi'an Jiao Tong University; 710049 Xi'an China

Funder

Small Project Grant

University of Hong Kong

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Organic thin-film transistors

2. Recent Progress in Organic Electronics: Materials, Devices, and Processes

3. High-performance pentacene thin-film transistors with high dielectric constant gate insulators

4. High-performance organic thin-film transistor by using LaNbO as gate dielectric

5. Promising high-k dielectric permittivity of pyrochlore-type crystals of Nd2Hf2O7

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