High-performance organic thin-film transistor by using LaNbO as gate dielectric
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong
2. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong
Funder
CRCG Grant of HKU
Nanotechology research institute
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927098
Reference40 articles.
1. Pentacene-based radio-frequency identification circuitry
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4. Overcoming tradeoff between mobility and bias stability in organic field-effect transistors according to the self-assembled monolayer chain lengths
5. MoO3 Modification Layer to Enhance Performance of Pentacene-OTFTs With Various Low-Cost Metals as Source/Drain Electrodes
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