The role of an ultrathin silicon interlayer at the SiO2‐Ge interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350874
Reference38 articles.
1. Interface engineering with pseudormorphic interlayers: Ge metal‐insulator‐semiconductor structures
2. Gating of germanium surfaces using pseudomorphic silicon interlayers
3. Electrical and microstructural characterisation of an ultrathin silicon interlayer used in a silicon dioxide/germanium-based MIS structure
4. Inversion of n‐Type GaAs Surfaces Using a Silicon‐Silicon Dioxide Insulator Structure
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