Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions-Reference-Cited by-同舟云学术

Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions

Published:2016-03-01 Issue:11 Volume:3 Page:1500510
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Kuzmin Mikhail¹²,Laukkanen Pekka¹,Mäkelä Jaakko¹,Yasir Muhammad¹,Tuominen Marjukka¹,Dahl Johnny¹,Punkkinen Marko P. J.¹,Kokko Kalevi¹,Hedman Hannu-Pekka³,Moon Jongyun³,Punkkinen Risto³,Lastusaari Mika⁴⁵,Polojärvi Ville⁶,Korpijärvi Ville-Markus⁶,Guina Mircea⁶

Affiliation:

1. Department of Physics and Astronomy; University of Turku; FI-20014 Turku Finland

2. Ioffe Physical-Technical Institute; Russian Academy of Sciences; St. Petersburg 194021 Russian Federation

3. Department of Information Technology; University of Turku; FI-20014 Turku Finland

4. Department of Chemistry; University of Turku; FI-20014 Turku Finland

5. Turku Centre for Materials and Surfaces (MatSurf); Turku Finland

6. Optoelectronics Research Centre; Tampere University of Technology; FI-33101 Tampere Finland

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/admi.201500510/fullpdf

Reference38 articles.

1. Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation

2. Mechanistic Studies of Dielectric Growth on Silicon

3. Interfacial Properties of Epitaxial Oxide/Semiconductor Systems

4. Interfacial Chemistry of Oxides on III-V Compound Semiconductors

5. Electronic and Optical Properties of Silicon Nanocrystals

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