Gating of germanium surfaces using pseudomorphic silicon interlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100642
Reference9 articles.
1. Dominant Surface Electronic Properties of SiO2‐Passivated Ge Surfaces as a Function of Various Annealing Treatments
2. Frequency and Temperature Dependence of C-V Characteristics at Ge-SiO2Interface and BT Treatments
3. Some Properties of Vapor Deposited Ge[sub 3]N[sub 4], Films and the Ge[sub 3]N[sub 4]-Ge Interface
4. Relationships of the Chemical and Electrical Interfacial Properties of Germanium ‐ SiO2 Systems
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