Germanium Processing
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-15868-1_1.pdf
Reference77 articles.
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2. Hymes, D.J., Rosenberg, J.J.: Growth and materials characterization of native germanium oxynitride thin films on germanium. J. Electrochem. Soc. 135(4), 961–965 (1988)
3. Rosenberg, J.J., Martin, S.C.: Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator. IEEE Electron Device Lett. 9(12),639–640 (1988)
4. Martin, S.C., Hitt, L.M., Rosenberg, J.J.: p-channel germanium MOSFETs with high channel mobility. IEEE Electron Device Lett. 10(7), 325–326 (1989)
5. Jackson, T.N., Ransom, C.M., DeGelormo, J.F.: Gate-self-aligned p-channel germanium MISFET’s. IEEE Electron Device Lett. 12(11), 605–607 (1991)
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