Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach-Reference-Cited by-同舟云学术

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Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

Published:2013-01-07 Issue:1 Volume:113 Page:013513
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Capellini G.,Kozlowski G.,Yamamoto Y.,Lisker M.,Wenger C.,Niu G.,Zaumseil P.,Tillack B.,Ghrib A.,de Kersauson M.,El Kurdi M.,Boucaud P.,Schroeder T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4772781

Reference19 articles.

1. High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

2. Recent progress in lasers on silicon

3. Ge-on-Si laser operating at room temperature

4. An electrically pumped germanium laser

5. High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

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1. Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors;Materials Science in Semiconductor Processing;2024-06

2. Mechanically induced optical loss mechanism due to thermal expansion coefficient mismatch in micro-cavities with all-around stressor layers;APL Photonics;2024-05-01

3. High detectivity Ge photodetector at 940 nm achieved by growing strained-Ge with a top Si stressor;Optics Express;2024-03-07

4. Enhanced second-harmonic generation in strained germanium-on-insulator microdisks for integrated quantum photonic technologies;Optics Letters;2023-08-07

5. PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band;Optics Express;2023-01-13

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