Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3637633
Reference20 articles.
1. Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
2. Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
3. Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures
4. Conductive atomic force microscopy studies of thin SiO2 layer degradation
5. Nanoscale Bias-Annealing Effect in Postirradiated Thin Silicon Dioxide Films Observed by Conductive Atomic Force Microscopy
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