Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3533257
Reference18 articles.
1. Electron Device Meeting Technical Digest, 2008;Asenov A.
2. Proceedings of the Solid-State Device Research Conference;Yew K. S.,2009
3. Conductive atomic force microscopy studies of thin SiO2 layer degradation
4. Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy
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