Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1382624
Reference15 articles.
1. On the breakdown statistics of very thin SiO2 films
2. Observation and creation of current leakage sites in ultrathin silicon dioxide films using scanning tunneling microscopy
3. Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress
4. Localized degradation studies of ultrathin gate oxides
5. Ballistic-electron emission microscopy studies of charge trapping in SiO2
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