Localized degradation studies of ultrathin gate oxides-Reference-Cited by-同舟云学术

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Localized degradation studies of ultrathin gate oxides

Published:1998-05 Issue:3 Volume:16 Page:1735-1740
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wen H. J.,Ludeke R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581293

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot electron transport in Au–HfO2–SiO2–Si structures studied by ballistic electron emission spectroscopy;Applied Physics Letters;2007-04-02

2. Conductive atomic force microscopy studies of thin SiO2 layer degradation;Applied Physics Letters;2006-05-29

3. Two-Trap-Assisted Tunneling Model for Post-Breakdown$I-V$Characteristics in Ultrathin Silicon Dioxide;IEEE Transactions on Device and Materials Reliability;2006-03

4. Post-breakdown oxide voltage oscillation in thin SiO2 under nano-scaled repetitive ramped voltage stress;Electronics Letters;2006

5. Electrical characterization at a nanometer scale of weak spots in irradiated SiO/sub 2/ gate oxides;IEEE Transactions on Nuclear Science;2005-10

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