Post-breakdown oxide voltage oscillation in thin SiO2 under nano-scaled repetitive ramped voltage stress
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20063577?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Current limited stresses of SiO/sub 2/ gate oxides with conductive atomic force microscope
2. Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of the surrounding ambient on the reliability of the electrical characterization of thin oxide layers using an atomic force microscope;Microelectronics Reliability;2011-12
2. Study of the physical and electrical degradation of thin oxide films by atomic force microscope;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01
3. Improvement in the Cumulative Failure Distribution of High-kDielectric Subjected to Nanoscale Stress by D2Post-Deposition Annealing;Japanese Journal of Applied Physics;2009-11-20
4. Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses;IEEE Transactions on Device and Materials Reliability;2008-06
5. Thin Gate Oxide Reliability Study Using Nano-Scaled Stress;2007 IEEE Conference on Electron Devices and Solid-State Circuits;2007
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3