Low‐temperature preparation of SiO2/Si(100) interfaces using a two‐step remote plasma‐assisted oxidation‐deposition process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106626
Reference9 articles.
1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
2. Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces
3. Substrate temperature dependence of subcutaneous oxidation at Si/SiO2 interfaces formed by remote plasma‐enhanced chemical vapor deposition
4. Low‐rate plasma oxidation of Si in a dilute oxygen/helium plasma for low‐temperature gate quality Si/SiO2 interfaces
5. Microscopic structure of theSiO2/Si interface
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