Continuous-wave room temperature operated 3.0μm type I GaSb-based lasers with quinternary AlInGaAsSb barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2890053
Reference13 articles.
1. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
2. Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3–2.7μm laser structures
3. Edge and vertical surface emitting lasers around 2.0–2.5 μm and their applications
4. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
5. Low Threshold High-Power Room-Temperature Continuous-Wave Operation Diode Laser Emitting at 2.26<tex>$muhboxm$</tex>
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