High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL)
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference46 articles.
1. Room‐temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965double heterostructures grown by molecular‐beam epitaxy on GaSb substrates
2. Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm
3. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm
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