High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels-Reference-Cited by-同舟云学术

High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

Published:2018-12-03 Issue:23 Volume:113 Page:233503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yachao¹,Wang ZhiZhe²,Guo Rui¹,Liu Ge¹,Xu Shengrui¹^ORCID,Bao Weimin³,Zhang Jincheng¹,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China

2. China Electronic Product Reliability and Environmental Testing Research Institute, No. 110 Dongguanzhuang Road, Guangzhou 510610, China

3. School of Aerospace Science and Technology, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5051685

Reference25 articles.

1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

2. Spontaneous polarization and piezoelectric constants of III-V nitrides

3. Electron transport in wurtzite indium nitride

4. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

5. Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition

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