Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of channel thickness on structure and transport properties of AlGaN/InGaN heterostructures grown by pulsed metal organic chemical vapor deposition

Published:2018-09 Issue: Volume:105 Page:368-371
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Zhang Yachao,Wang Zhizhe,Xu Shengrui,Bao Weimin,Zhang Tao,Huang Jun,Zhang Jincheng,Hao Yue

Funder

National Key Research and Development Program of China

National Postdoctoral Program for Innovative Talents

Jiangsu Provincial Science and Technology

Major Project of Industry-University-Research Collaboration and Innovation of Guangzhou

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

3. First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

4. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors

5. Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

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