Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs

Author:

Koo Sang-Mo,Kang Min-SeokORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR;Olivier;IEEE Trans. Electron Devices,2007

2. High-performance integrated dual-gate AlGaN/GaN enhancement-mode transistor;Lu;IEEE Electron Device Lett.,2010

3. Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement;Cho;Solid State Electron.,2002

4. Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility;Katz;IEEE Trans. Electron Devices,2003

5. Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates;Yu;Appl. Phys. Lett.,1998

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