Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond-Reference-Cited by-同舟云学术

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Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond

Published:2018-04-30 Issue:18 Volume:112 Page:181602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Verona C.¹,Arciprete F.²³^ORCID,Foffi M.²,Limiti E.⁴^ORCID,Marinelli M.¹^ORCID,Placidi E.²³,Prestopino G.¹,Verona Rinati G.¹^ORCID

Affiliation:

1. Dipartimento di Ingegneria Industriale, Università di Roma “Tor Vergata”, via del Politecnico 1, Roma 00133, Italy

2. Dipartimento di Fisica, Università di Roma “Tor Vergata” via della Ricerca Scientifica 1, Roma 00133, Italy

3. Istituto di Struttura della Materia ISM-CNR, Via Fosso del Cavaliere 100, Roma 00133, Italy

4. Dipartimento di Ingegneria Elettronica, Università di Roma “Tor Vergata”, via del Politecnico 1, Roma 00133, Italy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5027198

Reference37 articles.

1. CVD diamond—Research, applications, and challenges

2. CVD Diamond for Electronic Devices and Sensors

3. High-Performance P-Channel Diamond Metal–Oxide–Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

4. Diamond-based RF power transistors: Fundamentals and applications

5. Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

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4. The influence of hydrogen plasma etching on the surface conductivity of the polycrystalline diamond surface and the temperature-dependent properties;AIP Advances;2023-06-01

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