Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions-Reference-Cited by-同舟云学术

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Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

Published:2011-05 Issue:5 Volume:32 Page:599-601
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Moran D A J,Fox O J L,McLelland H,Russell S,May P W

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5755446/05735184.pdf?arnumber=5735184

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on Stability of H-Terminated Diamond MESFET;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs;IEEE Transactions on Electron Devices;2023-01

3. n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C;IEEE Electron Device Letters;2022-04

4. Surface transfer doping of diamond: A review;Progress in Surface Science;2021-02

5. Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film;Diamond and Related Materials;2020-06

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