Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs-Reference-Cited by-同舟云学术

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Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs

Published:2023-01 Issue:1 Volume:70 Page:20-24
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Junfei¹^ORCID,Wu Yong¹^ORCID,Zhang Jinfeng¹^ORCID,Wang Dong¹,Ren Zeyang¹,Chen Xing²^ORCID,Lei Yingyi³,Zhang Jincheng¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, P. R. China

2. Xidian-Wuhu Research Institute, Wuhu, P. R. China

3. Xi’an Microelectronic Technology Institute, Xi’an, P. R. China

Funder

National MCF Energy Research and Development Program

National Natural Science Foundation of China

China Post-Doctoral Science Foundation

Fundamental Research Funds for the Central Universities

Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10004030/09966618.pdf?arnumber=9966618

Reference20 articles.

1. High frequency hydrogen-terminated diamond MESFET with an fmax of 103 GHz;yu;Mater Today Commun,2021

2. Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

3. High-performance p-channel diamond MOSFETs with alumina gate insulator

4. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

5. High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs

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1. One-dimensional III-nitrides: towards ultrahigh efficiency, ultrahigh stability artificial photosynthesis;Journal of Materials Chemistry A;2023

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