Damage‐dependent electrical activation of ion‐implanted silicon. I. Experiments on phosphorus implants
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325703
Reference16 articles.
1. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
2. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
3. Correlation between lattice damage and electrical activation of phosphorus-implanted silicon
4. Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon
5. Ion implantation in semiconductors—Part II: Damage production and annealing
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