Correlation between lattice damage and electrical activation of phosphorus-implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
1. Ion implantation in semiconductors—Part II: Damage production and annealing
2. Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon
3. Annealing Behavior of Phosphorus Implanted Silicon Crystals
4. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose
5. Electrical activation processes of p+ions channeled along the [110] axis of silicon: Effect of annealing on carriers profiles shape
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2. Effects of dose on activation characteristics of P in Ge;Thin Solid Films;2012-02
3. Solid state quantum computer development in silicon with single ion implantation;Journal of Applied Physics;2003-12
4. Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon;MRS Proceedings;1996
5. Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon;MRS Proceedings;1996
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