Electrical activation processes of p+ions channeled along the [110] axis of silicon: Effect of annealing on carriers profiles shape
Author:
Affiliation:
1. a Laboratorio di Chimica e Tecnologia dei Materiali e dei Componenti per l'Elettronica , C.N.R., via de'Castagnoli 1, Bologna , Italy
2. b Istituto Chimico, Facoltà di Ingegneria , Università di Bologna , Bologna , Italy
Publisher
Informa UK Limited
Subject
General Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/00337577508234746
Reference11 articles.
1. Doping and radiation damage profiles of P+ions implanted in silicon along the [110] axis
2. A technique to obtain deep penetrating ohmic contacts for electrical measurements on ion implanted silicon
3. High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
4. Determination of Lattice Disorder Profiles in Crystals by Nuclear Backscattering
5. Nelson , R. S. 1970.Proc. Europ. Conf. on Ion Implantat.212Reading, England
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1. Junction Formation in Silicon by Rapid Thermal Annealing;MRS Proceedings;1993
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3. Junction Formation in Silicon by Rapid Thermal Annealing;Rapid Thermal Processing;1993
4. Effect of annealing and oxide layer thickness on doping profile shape of “through-oxide” implanted P+ ions in textured silicon;Renewable Energy;1991-01
5. Scanning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates;Japanese Journal of Applied Physics;1984-08-20
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