Temperature dependence of anomalous currents in worst-bit cells in dynamic random-access memories
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373498
Reference11 articles.
1. On the retention time distribution of dynamic random access memory (DRAM)
2. Statistical modeling of dynamic random access memory data retention characteristics
3. Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions
4. Theoretical study of deep-trap-assisted anomalous currents in worst-bit cells of dynamic random-access memories (DRAM's)
5. Statistics of the Recombinations of Holes and Electrons
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