H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface-Reference-Cited by-同舟云学术

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H2S exposure of a (100)Ge surface: Evidences for a (2×1) electrically passivated surface

Published:2007-05-28 Issue:22 Volume:90 Page:222105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Houssa M.,Nelis D.,Hellin D.,Pourtois G.,Conard T.,Paredis K.,Vanormelingen K.,Vantomme A.,Van Bael M. K.,Mullens J.,Caymax M.,Meuris M.,Heyns M. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2743385

Reference14 articles.

1. Growth mechanism difference of sputtered HfO2 on Ge and on Si

2. Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

3. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

4. Photoemission surface core-level study of sulfur adsorption on Ge(100)

5. Surface-bonding geometry of (2×1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure technique

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1. Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation;Journal of Materials Science: Materials in Electronics;2023-10

2. Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate;Journal of Physics D: Applied Physics;2021-02-22

3. Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0–0.3);Journal of Materials Chemistry C;2021

4. Progress Towards Passivation of High-Mobility Channels;ECS Transactions;2019-12-17

5. (Invited) Chemisorption Reaction Mechanisms for Atomic Layer Deposition of High-k Oxides on High Mobility Channels;ECS Transactions;2019-12-17

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