Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0–0.3)
Author:
Affiliation:
1. School of Advanced Materials Science & Engineering, Sungkyunkwan University
2. Suwon 16419
3. Republic of Korea
4. Department of Materials Science & Chemical Engineering, Hanyang University
5. Ansan 15588
Abstract
To understand the effect of H2S pre-annealing treatment on a Si1−xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1−xGex were studied while varying the Ge concentration (x value) from 0 to 0.3.
Funder
Samsung
National Research Foundation of Korea
Korea Evaluation Institute of Industrial Technology
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04760K
Reference45 articles.
1. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2. SiGe field effect transistors
3. The characteristic of HfO2 on strained SiGe
4. Electrical properties of high-k HfO2 films on Si1−xGex substrates
5. Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference
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1. Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing;Journal of Applied Physics;2024-03-27
2. Electrical Properties of HfO2 on Si1–xGex Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing;ACS Applied Electronic Materials;2023-02-01
3. Effects of High‐Pressure H 2 and D 2 Post‐Metallization Annealing on the Electrical Properties of HfO 2 /Si 0.7 Ge 0.3;physica status solidi (RRL) – Rapid Research Letters;2023-01
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