Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates-Reference-Cited by-同舟云学术

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Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates

Published:2011-02-21 Issue:8 Volume:98 Page:081102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Feng I. W.,Cao X. K.,Li J.,Lin J. Y.,Jiang H. X.,Sawaki N.,Honda Y.,Tanikawa T.,Zavada J. M.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3556678

Reference22 articles.

1. Er-Doped GaN and InxGa1-xN for Optical Communications

2. Erbium-doped GaN optical amplifiers operating at 1.54 μm

3. Electroluminescence of erbium-doped silicon

4. Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

5. Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Erbium energy levels in GaN grown by hydride vapor phase epitaxy;AIP Advances;2020-12-01

2. Observation of optical gain in Er-Doped GaN epilayers;Journal of Luminescence;2020-05

3. Stability, Electronic and Magnetic Properties of Rare Earth (Eu, Tm) Implanted InGaN;Journal of Superconductivity and Novel Magnetism;2019-01-04

4. Resonant excitation cross-sections of erbium in freestanding GaN bulk crystals;Applied Physics Letters;2018-05-14

5. Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region;ACS Photonics;2018-02-22

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