Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365821
Reference31 articles.
1. Growth studies of erbium‐doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl‐based erbium sources
2. Pressure Measurement Made by the Utilization of Ruby Sharp-Line Luminescence
3. High pressure optical studies of doped YAG
4. Extremely sharp erbium‐related intra‐4f‐shell photoluminescence of erbium‐doped GaAs grown by metalorganic chemical vapor deposition
5. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
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