Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region-Reference-Cited by-同舟云学术

Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region

Author:

Ho V. X.¹^ORCID,Al tahtamouni T. M.²,Jiang H. X.³,Lin J. Y.³,Zavada J. M.⁴,Vinh N. Q.¹^ORCID

Affiliation:

1. Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States

2. Materials Science and Technology Program, College of Arts and Sciences, Qatar University, Doha 2713, Qatar

3. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, United States

4. Department of Electrical and Computer Engineering, New York University, Brooklyn, New York 11201, United States

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

Reference35 articles.

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