Effects of the polarization field on optical transitions and selection rules in Er doped GaN

Author:

Yan Yaqiong1ORCID,Li Jing1,Lin Jingyu1,Jiang Hongxing1

Affiliation:

1. Texas Tech University

Abstract

Effects of the polarization field on the Er3+ intra-4f shell transitions in GaN have been investigated via comparison of photoluminescence emission spectroscopy studies conducted on Er:GaN and Er:YAG. The dominant optical transitions were compared and analyzed. It was observed that the dominant optical transitions in Er:GaN/Er:YAG are between the Stark levels of the same/different irreducible representations. The unique selection rules in Er:GaN are a consequence of the presence of a net local polarization field acting on Er due to the wurtzite crystal structure of GaN. The results provide useful insights into understanding of the dominant optical transitions and the most probable emission lines to be utilized to achieve lasing in Er:GaN.

Funder

Office of Naval Research Global

Publisher

Optica Publishing Group

Subject

Electronic, Optical and Magnetic Materials

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