Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2361196
Reference19 articles.
1. Luminescence properties of erbium in III–V compound semiconductors
2. THE SPECTROSCOPY OF RARE EARTH DOPED CHALCOGENIDES
3. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
4. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
5. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
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