Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures

Abstract

Erbium-doped gallium nitride (Er:GaN) is a promising gain material for solid-state high-energy lasers operating in the 1.5  μm wavelength window due to the superior optical properties and extremely high thermal conductivity of a GaN host crystal that permit high-power and high-temperature applications. We report the realization of all-crystalline GaN/Er:GaN/GaN embedded waveguide fiber structures using the hydride vapor phase epitaxy growth and re-growth technique, along with chemical–mechanical polishing processes. The Er:GaN core layer possesses an Er doping concentration of [Formula: see text] atoms/cm3, confirmed by secondary ion mass spectrometry measurements. X-ray diffraction measurements confirm, respectively, c-, a-, and m-plane orientations for top/bottom, side, and front/back cross-sectional cladding layers of the fiber structure with good single-crystalline quality. The 1.5  μm Er3+ emission was detected from each surface of the fiber structures via 980 nm resonant excitation. The effect of 1.54  μm light guiding by the fiber structure has been demonstrated. This work laid the foundation toward achieving all-crystalline core-cladding fibers based on GaN wide bandgap semiconductor with potential applications in the harsh environments of high powers, power densities, and temperatures.