Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature-Reference-Cited by-同舟云学术

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Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature

Published:2016-09-26 Issue:13 Volume:109 Page:131902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Perrin C.¹,Ghegin E.²³,Zhiou S.³,Nemouchi F.³,Rodriguez P.³^ORCID,Gergaud P.³,Maugis P.¹,Mangelinck D.¹,Hoummada K.¹

Affiliation:

1. Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France

2. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France

3. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963132

Reference27 articles.

1. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

2. Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts

3. Reduction of Off-State Leakage Current in In0.7Ga0.3As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contact Metallization

4. A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs

5. In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain

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1. Phase decomposition in the Ni–InGaAs system at high annealing temperature;Journal of Materials Science;2023-10

2. Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices;Materials Science in Semiconductor Processing;2023-02

3. Thickness Effect on the Solid-State Reaction of a Ni/GaAs System;Nanomaterials;2022-07-30

4. Structure and chemistry investigations of Ni3InAs thin film on InAs substrate;Intermetallics;2020-10

5. Development of a CMOS-compatible contact technology for III–V materials and Si photonics;Japanese Journal of Applied Physics;2020-03-30

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