Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts-Reference-Cited by-同舟云学术

Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts

Published:2012 Issue:2 Volume:1 Page:P82-P85
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zhang Xingui,Guo Hua Xin,Gong Xiao,Yeo Yee-Chia

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Fluorine Incorporation in HfAlO Gate Dielectric for Defect Passivation and Effect on Electrical Characteristics of In[sub 0.53]Ga[sub 0.47]As n-MOSFETs

2. Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs with an InP Capping Layer for Performance Enhancement

3. Radosavljevic M. Chu-Kung B. Corcoran S. Dewey G. Hudait M. K. Fastenau J. M. Kavalieros J. Liu W. K. Lubyshev D. Metz M. , Tech. Dig. – Int. Electron Devices Meet., 2009, 319.

4. Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] Passivation

5. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

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