Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3702458
Reference36 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. Wide band gap semiconductor reliability : Status and trends
3. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
4. GaN-Based RF Power Devices and Amplifiers
5. Reliability of large periphery GaN-on-Si HFETs
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2. Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate;Lecture Notes in Electrical Engineering;2023-09-03
3. Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN;Brazilian Journal of Physics;2022-12-17
4. Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2022-11
5. DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures;Journal of Physics D: Applied Physics;2022-08-31
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