Novel AlGaInAs/AlInAs lasers emitting at 1 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103809
Reference5 articles.
1. New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy
2. GaInAs/AlGaInAs DH and MQW lasers with 1.5–1.7 μm lasing wavelengths grown by atmospheric pressure MOVPE
3. GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE
4. Low threshold current GaInAs/AlInAs ridge mow lasers with InP cladding layers
5. Electromagnetic propagation in periodic stratified media I General theory*
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs);Semiconductor Science and Technology;2001-03-27
2. Molecular-beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
3. Amplification and lasing at 1.3 μm in praseodymium-doped fluorozirconate fibres;Electronics Letters;1991
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