New current injection 1.5‐μm wavelength GaxAlyIn1−x−yAs/InP double‐heterostructure laser grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93801
Reference7 articles.
1. Al0.48In0.52As/Ga0.47In0.53As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm
2. Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasers
3. 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
4. High quality InP grown by molecular beam epitaxy
5. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
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