Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)-Reference-Cited by-同舟云学术

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Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)

Published:2001-03-27 Issue:5 Volume:16 Page:339-344
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang Wei-Chou,Pan Hsi-Jen,Lin Kun-Wei,Yu Kuo-Hui,Cheng Chin-Chuan,Yen Chih-Hung,Cheng Shiou-Ying,Liu Wen-Chau

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. MBE growth of AlxGayIn1−x−yAs for a DHBT structure

2. Novel AlGaInAs/AlInAs lasers emitting at 1 μm

3. Multiply-graded InGaAlAs heterojunction bipolar transistors

4. Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy

5. Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

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