Low-threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19900581?crawler=true&mimetype=application/pdf
Reference10 articles.
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependence of the Parameters of 1.55-μm Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures;Technical Physics Letters;2019-06
2. Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs);Semiconductor Science and Technology;2001-03-27
3. 1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter;IEEE Photonics Technology Letters;2000-05
4. Molecular-beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
5. Strained GaInAs-AlGaInAs 1.5-μm-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the p-side optical confinement layer;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
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