Strained GaInAs-AlGaInAs 1.5-μm-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the p-side optical confinement layer-Reference-Cited by-同舟云学术

Strained GaInAs-AlGaInAs 1.5-μm-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the p-side optical confinement layer

Published:1995-06 Issue:2 Volume:1 Page:285-292
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Irikawa M.,Shimizu H.,Fukushima I.,Nishikata K.,Hirayama Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx1/2944/9048/00401207.pdf?arnumber=401207

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 μm AlGaInAs∕AlGaInAs strain-compensated multiple-quantum-well laser diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

2. Growth and characterization of compressive-strain GaInAsP/InP multiple-quantum-well laser diodes with the tensile-strain GaInP quantum barrier;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

3. Effect of InGaAsP intermediate layer in 1.3 μm AlGaInAs strain-compensated multiple quantum well laser diodes;IEE Proceedings - Optoelectronics;2003-12-01

4. 1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes;IEEE Transactions on Electron Devices;2002-07

5. Engineering and investigating the control of semiconductor surfaces and interfaces;Journal of Physics D: Applied Physics;2002-04-18