Low threshold current GaInAs/AlInAs ridge mow lasers with InP cladding layers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19880432?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates;Applied Physics Letters;2007-12-24
2. InGaAs/InGaAlAs MQW lasers with InGaAsP guiding layers grown by gas source molecular beam epitaxy;IEEE Photonics Technology Letters;1991-11
3. Novel AlGaInAs/AlInAs lasers emitting at 1 μm;Applied Physics Letters;1990-12-17
4. Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm;IEEE Photonics Technology Letters;1990-09
5. InGaAs/InAlAs SCH-MQW lasers with superlattice optical confinement layers grown by MBE;IEEE Photonics Technology Letters;1990-01
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