Defects in low‐temperature‐grown GaAs annealed at 800 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108449
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1. New MBE buffer used to eliminate backgating in GaAs MESFETs
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3. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
4. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
5. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
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